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| Preliminary data SIPMOS (R) Power Transistor * N-Channel * SPP46N03L SPB46N03L Enhancement mode * Avalanche rated * Logic Level * dv/dt rated * 175C operating temperature Type SPP46N03L SPB46N03L Pin 1 G Pin 2 D Pin 3 S VDS 30 V ID 46 A RDS(on) 0.018 0.012 @ VGS Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4147-A2 Q67040-S4743-A3 VGS = 4.5 V VGS = 10 V Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 46 46 Unit A ID TC = 25 C, limited by bond wire TC = 100 C Pulsed drain current ID puls EAS IAR EAR dv/dt 184 250 46 12 6 mJ A mJ kV/s TC = 25 C Avalanche energy, single pulse ID = 46 A, V DD = 25 V, RGS = 25 Avalanche current,periodic limited by jmax T Avalanche energy,periodic limited by j(max) T Reverse diode d v/dt IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Gate source peak voltage, aperiodic Power dissipation VGS Vgs Ptot Tj Tstg 14 20 120 -55 ... +175 -55 ... +175 55/175/56 V W C TC = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Semiconductor Group 1 06 / 1998 Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol min. Values typ. 62 tbd tbd SPP46N03L SPB46N03L Unit max. 1.25 K/W RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) IDSS 30 1.2 1.6 2 V VGS = 0 V, ID = 0.25 mA Gate threshold voltage,VGS = VDS ID = 80 A, Tj = 25 C Zero gate voltage drain current A 0.1 10 1 100 100 nA 0.014 0.008 0.018 0.012 VDS = 30 V, VGS = 0 V, Tj = 25 C VDS = 30 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, ID = 46 A VGS = 10 V, ID = 46 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 06 / 1998 Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance Symbol min. Values typ. 49 1640 650 280 16 SPP46N03L SPB46N03L Unit max. 2100 820 350 24 ns S pF gfs Ciss Coss Crss td(on) 20 - VDS2*ID*RDS(on)max , ID = 46 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, I D = 46 A, RG = 3.6 Rise time tr - 30 45 VDD = 15 V, V GS = 4.5 V, I D = 46 A, RG = 3.6 Turn-off delay time td(off) - 20 30 VDD = 15 V, V GS = 10 V, I D = 46 A, RG = 3.6 Fall time tf - 25 38 VDD = 15 V, V GS = 4.5 V, I D = 46 A, RG = 3.6 Semiconductor Group 3 06 / 1998 Preliminary data SPP46N03L SPB46N03L Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold Symbol min. Values typ. 1.7 32 54 3.83 max. 2.6 50 80 nC V nC Unit Q G(th) Q g(5) Qg V(plateau) - VDD = 24 V, ID0,1 A, V GS = 0 to 1 V Gate charge at Vgs=5V VDD = 24 V, ID = 46 A , VGS = 0 to 5 V Gate charge total VDD = 24 V, ID = 46 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 46 A Reverse Diode Inverse diode continuous forward current IS ISM V SD trr Q rr - 1.1 50 0.06 46 184 1.7 75 0.09 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C V GS = 0 V, I F = 92 A Reverse recovery time V R = 15 V, I F=I S , diF/dt = 100 A/s Reverse recovery charge V R = 15 V, I F=lS , diF/dt = 100 A/s Semiconductor Group 4 06 / 1998 Preliminary data Power Dissipation Drain current SPP46N03L SPB46N03L Ptot = f (TC) SPP46N03L ID = f (TC) parameter: VGS 10 V SPP46N03L 130 W 50 A 110 40 Ptot 100 90 80 70 ID 35 30 25 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 C 175 20 15 10 5 0 0 180 20 40 60 80 100 120 140 C 180 Tj Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 0.005 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Semiconductor Group 5 06 / 1998 Preliminary data Typ. output characteristics Drain-source on-resistance SPP46N03L SPB46N03L I D = f (VDS) parameter: tp = 80 s SPP46N03L RDS(on) = f (Tj ) parameter : ID = 46 A, VGS = 4.5 V SPP46N03L 0.045 110 A Ptot = 120W l kji h g [V] V f GS a b c 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 90 ID 80 70 e RDS(on) 0.035 0.030 0.025 d e f g 60 50 40 30 20 10 0 0.0 a c d 98% 0.020 h i j k l typ 0.015 0.010 0.005 b 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 -60 -20 20 60 100 C 180 VDS Tj Semiconductor Group 6 06 / 1998 Preliminary data Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 s Gate threshold voltage SPP46N03L SPB46N03L VGS(th) = f (Tj ) parameter : VGS = VDS , ID = 80 A 3.0 V VDS 2 x I D x R DS(on)max 80 EAS mJ 2.4 V GS(th) 2.2 2.0 1.8 40 1.6 1.4 1.2 1.0 max 20 0.8 0.6 0.4 0.2 typ 0 0 1 2 3 C 5 0.0 -60 -20 20 60 100 140 V min 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f(V DS) Parameter: V GS=0 V, f=1 MHz 10 4 IF = f (VSD) parameter: Tj , tp = 80 s SPP46N03L 10 3 A nF C Ciss IF 10 2 10 3 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 4 8 12 16 20 24 28 32 V 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS Semiconductor Group 7 VSD 06 / 1998 Preliminary data Avalanche Energy E AS = f (Tj) parameter: ID = 46 A,VDD = 25 V Typ. gate charge SPP46N03L SPB46N03L VGS = f (QGate) parameter: ID puls =46A SPP46N03L RGS = 25 250 16 V VGS 150 12 10 8 0,2 VDS max 100 6 0,8 VDS max 4 50 2 0 20 40 60 80 100 120 140 180 0 0 10 20 30 40 50 60 80 nC QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP46N03L 36 V 34 33 32 31 30 29 28 27 -60 V(BR)DSS -20 20 60 100 C 180 Tj Semiconductor Group 8 06 / 1998 Preliminary data SPP46N03L SPB46N03L Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or ii d i d/ fh lif f h f il i i bl h h h lh f h Semiconductor Group 9 06 / 1998 |
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